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M52D128168A-10BIG 参数 Datasheet PDF下载

M52D128168A-10BIG图片预览
型号: M52D128168A-10BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
makes Hi-Z state the data-out of 2 CLK cycles after.(Read DQM latency is 2)  
MODE REGISTER FIELD TABLE TO PROGRAM MODES  
Register Programmed with MRS  
Address BA0 BA1  
Function  
A11 A10/AP  
A9  
0
A8  
0
A7  
0
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
0
0
0
0
CAS Latency  
Burst Length  
Test Mode  
Type  
CAS Latency  
Burst Type  
Burst Length  
A8  
0
A7  
A6  
0
A5  
0
A4  
0
Latency  
Reserved  
Reserved  
2
A3  
Type  
A2  
0
A1  
0
A0  
0
BT = 0  
BT = 1  
0
1
0
1
Mode Register Set  
Reserved  
0
1
Sequential  
Interleave  
1
2
4
8
1
2
4
8
0
0
0
1
0
0
1
1
Reserved  
0
1
0
0
1
0
1
Reserved  
0
1
1
3
0
1
1
1
0
0
Reserved  
Reserved  
Reserved  
Reserved  
1
0
0
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
Full Page Reserved  
1
0
1
1
0
1
1
1
0
1
1
0
1
1
1
1
1
1
Full Page Length : 512  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0  
8/47  
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