欢迎访问ic37.com |
会员登录 免费注册
发布采购

M52D128168A-10BIG 参数 Datasheet PDF下载

M52D128168A-10BIG图片预览
型号: M52D128168A-10BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M52D128168A-10BIG的Datasheet PDF文件第1页浏览型号M52D128168A-10BIG的Datasheet PDF文件第2页浏览型号M52D128168A-10BIG的Datasheet PDF文件第3页浏览型号M52D128168A-10BIG的Datasheet PDF文件第5页浏览型号M52D128168A-10BIG的Datasheet PDF文件第6页浏览型号M52D128168A-10BIG的Datasheet PDF文件第7页浏览型号M52D128168A-10BIG的Datasheet PDF文件第8页浏览型号M52D128168A-10BIG的Datasheet PDF文件第9页  
ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
DC CHARACTERISTICS  
Recommended operating condition unless otherwise notedTA = -40 to 85 °C  
CAS  
Latency  
Version  
Parameter  
Symbol  
Test Condition  
Burst Length = 1  
Unit Note  
-7.5  
-10  
Operating Current  
(One Bank Active)  
ICC1  
65  
65  
mA  
1
tRC tRC (min), tCC tCC (min), IOL= 0mA  
Precharge Standby  
Current in power-down  
mode  
ICC2P  
0.5  
0.5  
CKE VIL(max), tCC =15ns  
mA  
mA  
ICC2PS  
CKE VIL(max), CLK VIL(max), tCC = ∞  
CKE VIH(min), CS VIH(min), tCC =10ns  
10  
10  
mA  
ICC2N  
Precharge Standby  
Current in non  
power-down mode  
Input signals are changed one time during 20ns  
CKE VIH(min), CLK VIL(max), tCC = ∞  
Input signals are stable  
mA  
mA  
ICC2NS  
ICC3P  
5
2
CKE VIL(max), tCC =15ns  
Active Standby Current  
in power-down mode  
ICC3PS  
CKE VIL(max), CLK VIL(max), tCC = ∞  
CKE VIH(min), CS VIH(min), tCC=15ns  
25  
mA  
ICC3N  
Active Standby Current  
in non power-down  
mode  
Input signals are changed one time during 2clks  
All other pins VDD-0.2V or 0.2V  
(One Bank Active)  
CKE VIH (min), CLK VIL(max), tCC= ∞  
Input signals are stable  
15  
mA  
mA  
ICC3NS  
IOL= 0mA, Page Burst  
All Band Activated, tCCD = tCCD (min)  
1
2
Operating Current  
(Burst Mode)  
75  
70  
ICC4  
ICC5  
Refresh Current  
120  
100  
tRC tRC(min)  
uA  
15  
45  
70  
TCSR range  
°C  
4 Banks  
380  
360  
340  
400  
380  
350  
450  
450  
350  
uA  
uA  
Self Refresh Current  
ICC6  
CKE 0.2V  
2 Bank  
1 Bank  
Deep Power Down  
Current  
ICC7  
CKE 0.2V  
10  
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).  
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0 4/47  
 复制成功!