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M52D128168A-10BIG 参数 Datasheet PDF下载

M52D128168A-10BIG图片预览
型号: M52D128168A-10BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
12. About Burst Type Control  
At MRS A3 = “0”. See the BURST SEQUENCE TABLE. (BL = 4,8)  
BL = 1, 2, 4, 8 and full page.  
Sequential Counting  
Basic  
MODE  
At MRS A3 = “1”. See the BURST SEQUENCE TABLE. (BL = 4,8)  
BL = 4, 8 At BL =1, 2 interleave Counting = Sequential Counting  
Interleave Counting  
Every cycle Read/Write Command with random column address can realize  
Random Column Access.  
Random  
MODE  
Random Column Access  
tCCD = 1 CLK  
That is similar to Extended Data Out (EDO) Operation of conventional DRAM.  
13. About Burst Length Control  
At MRS A210 = “000”  
At auto precharge . tRAS should not be violated.  
1
At MRS A210 = “001”  
At auto precharge . tRAS should not be violated.  
2
Basic  
MODE  
4
At MRS A210 = “010”  
At MRS A210 = “011”  
8
At MRS A210 = “111”  
At the end of the burst length , burst is warp-around.  
Full Page  
tBDL = 1, Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.  
Using burst stop command, any burst length control is possible.  
Random  
MODE  
Burst Stop  
Before the end of burst. Row precharge command of the same bank stops read /write burst  
RAS Interrupt  
(Interrupted by  
Precharge)  
with auto precharge.  
tRDL = 2clk with DQM , Valid DQ after burst stop is 1, 2 for CAS latency 2, 3 respectively.  
Interrupt  
During read/write burst with auto precharge, RAS interrupt can not be issued.  
MODE  
Before the end of burst, new read/write stops read/write burst and starts new read/write  
burst.  
CAS Interrupt  
During read/write burst with auto precharge, CAS interrupt can not be issued.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0 25/47  
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