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M52D128168A-10BIG 参数 Datasheet PDF下载

M52D128168A-10BIG图片预览
型号: M52D128168A-10BIG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 1134 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Operation Temperature Condition -40°C~85°C  
(b) CL = 3 , B L= 4  
CLK  
R D  
W R  
D0  
i ) C M D  
D Q M  
D Q  
D2  
D3  
D1  
W R  
i i ) C M D  
R D  
R D  
R D  
R D  
D Q M  
D Q  
D0  
D2  
D3  
D1  
i i i ) C M D  
W R  
D Q M  
D Q  
D0  
D2  
D3  
D1  
i v ) C M D  
W R  
D Q M  
D Q  
H i - Z  
D2  
D3  
D0  
D1  
v ) C M D  
W R  
D Q M  
D Q  
H i - Z  
Q0  
D0  
D2  
D3  
D1  
* N o t e 1  
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.  
5. Write Interrupted by Precharge & DQM  
CLK  
* N o t e 3  
C M D  
W R  
* N o t e 2  
D Q M  
D Q  
D0  
D3  
D2  
D1  
M a s k e d b y D Q M  
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.  
2. To inhibit invalid write, DQM should be issued.  
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt  
but only another bank precharge of four banks operation.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Sep. 2008  
Revision: 1.0 21/47  
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