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M24L816512SA-55BEG 参数 Datasheet PDF下载

M24L816512SA-55BEG图片预览
型号: M24L816512SA-55BEG
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 512K ×16 )伪静态RAM [8-Mbit (512K x 16) Pseudo Static RAM]
分类和应用:
文件页数/大小: 14 页 / 328 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M24L816512SA  
Product Portfolio Product  
Power Dissipation  
Operating ICC(mA)  
f = 1MHz f = fMAX  
VCC Range (V)  
Product  
Speed(ns)  
Standby, ISB2(µA)  
Typ. [5] Max.  
55  
Min.  
2.7  
Typ.  
3.0  
Max.  
3.6  
Typ.[5]  
Max.  
Typ.[5]  
Max.  
55  
70  
22  
17  
100  
110(for Vcc > 3.3V)  
M24L816512SA  
Notes:  
2
5
11  
2.DNU pins are to be left floating or tied to VSS.  
3.Ball G2, H6 are the address expansion pins for the 16-Mbit and 32-Mbit densities respectively.  
4.NC “no connect”—not connected internally to the die.  
5.Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC (typ)  
and TA = 25°C.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2009  
Revision : 1.5 3/14  
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