ESMT
M13S32321A (2G)
Write with Auto Precharge (@ BL=8)
0
1
2
3
4
5
6
7
8
9
10
C L K
C L K
H IG H
C K E
C S
R A S
C A S
B A
A8 /AP
A D D R
( A 0 ~ A 7 , A 9 )
R a
C a
W E
t
D A L
A u t o p r e c h a r g e s t a r t
t
W R
t
R P
No t e 1
D Q S
D Q
D a 5
D a 1 D a 2
D a 4
D a 7
Da 0
D a 3
D a 6
D M
C O M M A N D
ACTIVE
WRITE
:
D o n ’ t c a r e
111 0 1 B 3 2 R . A
Note: 1. The row active command of the precharge bank can be issued after tRP from this point.
The new read/write command of another activated bank can be issued from this point.
At burst read/write with auto precharge, CAS interrupt of the same/another bank is illegal.
Elite Semiconductor Memory Technology Inc.
Publication Date : Aug. 2012
Revision : 1.0 35/48