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M13S32321A-6BG2G 参数 Datasheet PDF下载

M13S32321A-6BG2G图片预览
型号: M13S32321A-6BG2G
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 1MX32, 0.7ns, CMOS, PBGA144, FBGA-144]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 48 页 / 1146 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S32321A (2G)  
Read with Auto Precharge  
If a read with auto precharge command is initiated, the DDR SDRAM automatically enters the precharge operation BL/2 clock later  
from a read with auto precharge command when tRAS (min) is satisfied. If not, the start point of precharge operation will be delayed  
until tRAS (min) is satisfied. Once the precharge operation has started the bank cannot be reactivated and the new command can not  
be asserted until the precharge time (tRP) has been satisfied.  
<Burst Length = 4, CAS Latency = 2 & 2.5>  
0
1
2
3
4
5
6
7
8
9
C L K  
C L K  
Read A  
C O M M A N D  
Bank A  
ACTIVE  
N O P  
N O P  
N O P  
N O P  
N O P  
N O P  
N O P  
N O P  
Auto Precharge  
t
R A S ( m i n )  
D Q S  
H i - Z  
H i - Z  
CAS Latency = 2  
D
DOUT 0  
OUT 1  
D
OUT 2  
D
OUT 3  
D Q ' s  
D Q S  
* Bank can be reactivated at  
completion of precharge  
t
R P  
H i - Z  
H i - Z  
CAS Latency = 2.5  
D
OUT 0  
OUT 1  
D
OUT 2 DOUT 3  
D
D Q ' s  
Auto-Precharge starts  
When the Read with Auto Precharge command is issued, new command can be asserted at 4, 5 and 6 respectively as follow.  
For the same bank  
For the different bank  
Asserted  
Command  
4
5
6
4
5
6
READ  
READ  
Illegal  
Illegal  
Illegal  
Legal  
Illegal  
Illegal  
Illegal  
Illegal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
Legal  
READ with AP*1 READ with AP  
Active  
Illegal  
Legal  
Precharge  
Note 1: AP = Auto Precharge  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2012  
Revision : 1.0 25/48  
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