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M13S32321A-6BG2G 参数 Datasheet PDF下载

M13S32321A-6BG2G图片预览
型号: M13S32321A-6BG2G
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 1MX32, 0.7ns, CMOS, PBGA144, FBGA-144]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 48 页 / 1146 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S32321A (2G)  
Extended Mode Register Set (EMRS)  
The extended mode register stores the data enabling or disabling DLL and selecting output drive strength. The default value of the  
extended mode register is not defined, therefore the extended mode register must be written after power up for enabling or disabling  
DLL. The extended mode register is written by asserting low on CS , RAS , CAS , WE and high on BA (The DDR SDRAM  
should be in all bank precharge with CKE already high prior to writing into the extended mode register). The state of address pins  
A0~A10 and BA in the same cycle as CS , RAS , CAS and WE going low is written in the extended mode register. Two clock  
cycles are requested to complete the write operation the mode register. The mode register contents can be changed using the same  
command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used for DLL enable or  
disable. A1 and A6 are used for setting drive strength. “High” on BA is used for EMRS. All the other address pins except A0~1, A6  
and BA must be set to low for proper EMRS operation. Refer to the table for specific codes.  
BA  
A10 A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Address Bus  
1
RFU  
DS  
RFU  
DS DLL  
Extended Mode Register  
A6  
0
A1  
Driver Strength  
100% Strength  
60% Strength  
15% Strength  
30% Strength  
A0  
0
DLL Enable  
Enable  
0
1
0
1
0
1
Disable  
1
1
BA Operating Mode  
0
1
MRS Cycle  
EMRS Cycle  
Note: RFU (Reserved for future use) must stay “0” during EMRS cycle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2012  
Revision : 1.0 15/48