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M13S32321A-6BG2G 参数 Datasheet PDF下载

M13S32321A-6BG2G图片预览
型号: M13S32321A-6BG2G
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 1MX32, 0.7ns, CMOS, PBGA144, FBGA-144]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 48 页 / 1146 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S32321A (2G)  
Mode Register Definition  
Mode Register Set (MRS)  
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,  
addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for variety of  
different applications. The default value of the register is not defined, therefore the mode register must be written after EMRS setting  
for proper DDR SDRAM operation. The mode register is written by asserting low on CS , RAS , CAS , WE and BA (The DDR  
SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register). The state of address pins  
A0~A10 in the same cycle as CS , RAS , CAS , WE and BA going low is written in the mode register. Two clock cycles are  
requested to complete the write operation in the mode register. The mode register contents can be changed using the same  
command and clock cycle requirements during operation as long as all banks are in the idle state. The mode register is divided into  
various fields depending on functionality. The burst length uses A0~A2, addressing mode uses A3, CAS latency (read latency from  
column address) uses A4~A6. A7 is used for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation.  
Refer to the table for specific codes for various burst length, addressing modes and CAS latencies.  
BA  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
Address Bus  
DLL  
Burst Length  
Mode Register  
0
RFU  
TM  
CAS Latency  
A8  
DLL Reset  
No  
A7  
Mode  
Normal  
Test  
A3  
0
Burst Type  
Sequential  
Interleave  
0
1
0
1
Yes  
1
Burst Length  
Length  
CAS Latency  
A2  
A1  
A0  
A6  
0
A5  
0
A4  
0
Latency  
Sequential Interleave  
BA  
0
Operating Mode  
MRS Cycle  
Reserve  
Reserve  
2
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserve  
2
Reserve  
2
0
0
1
1
EMRS Cycle  
0
1
0
4
4
0
1
1
3
8
8
1
0
0
Reserve  
Reserve  
2.5  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
Reserve  
1
0
1
1
1
0
1
1
1
Reserve  
Note: RFU (Reserved for future use) must stay “0” during MRS cycle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2012  
Revision : 1.0 14/48