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M13S2561616A-5BIG2S 参数 Datasheet PDF下载

M13S2561616A-5BIG2S图片预览
型号: M13S2561616A-5BIG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 49 页 / 1245 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2S)  
Operation Temperature Condition -40°C~85°C  
Simplified State Diagram  
Power  
Applied  
Power  
On  
Precharge  
PREALL  
Self  
Refresh  
REFS  
REFSX  
MRS  
REFA  
MRS  
EMRS  
Auto  
Refresh  
Idle  
CKEL  
CKEH  
Active  
Power  
Down  
Precharge  
Power  
Down  
ACT  
CKEH  
CKEL  
Write  
Burst Stop  
Bank  
Active  
Read  
Read  
Write  
Write A  
Read A  
Read  
Read  
Write  
Read A  
Write A  
Read A  
PRE  
Write  
A
Read  
A
PRE  
PRE  
Precharge  
PREALL  
PRE  
Automatic Sequence  
Command Sequence  
0911R.A  
PREALL = Precharge All Banks  
MRS = Mode Register Set  
EMRS = Extended Mode Register Set  
REFS = Enter Self Refresh  
REFSX = Exit Self Refresh  
REFA = Auto Refresh  
CKEL = Enter Power Down  
CKEH = Exit Power Down  
ACT = Active  
Write A = Write with Autoprecharge  
Read A = Read with Autoprecharge  
PRE = Precharge  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2015  
Revision : 1.0 45/49  
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