ESMT
M12S64322A
BASIC FEATURE AND FUNCTION DESCRIPTIONS
1. CLOCK Suspend
1 ) C l o c k S u s p e n d e d D u r i n g W r i t e ( B L = 4 )
2 ) C l o c k S u s p e n d e d D u r i n g R e a d ( B L = 4 )
CLK
C M D
CK E
W R
R D
Mask ed by C K E
Inter nal
CLK
D3
D3
DQ ( C L 2 )
DQ ( C L 3 )
D2
D2
Q2
Q3
D0
D0
Q0
Q1
Q0
D1
D1
Q3
Q2
Q1
Not W r it ten
Suspended Dout
2. DQM Operation
2 ) R e a d M a s k ( B L = 4 )
1 ) W r i t e M a s k ( B L = 4 )
CLK
C M D
W R
R D
D Q M
DQ ( C L 2 )
DQ ( C L 3 )
M a s k e d b y D Q M
M a s k e d b y D Q M
H i - Z
D0
D1
Q3
Q0
D3
Q2
H i - Z
D3
D1
D0
Q1
Q3
Q2
DQ M t o D at a- i n M a sk = 0
DQ M to D at a- ou t Ma sk = 2
* N o t e 2
3 ) D Q M w i t h c l c o k s u s p e n d e d ( F u l l P a g e R e a d )
CLK
C M D
CK E
R D
Inter nal
CLK
D Q M
H i - Z
H i - Z
H i - Z
H i - Z
H i - Z
H i - Z
Q6
Q5
Q7
Q6
Q4
Q3
Q8
Q7
Q0
Q2
DQ ( C L 2 )
DQ ( C L 3 )
Q1
*Note : 1. CKE to CLK disable/enable = 1CLK.
2. DQM masks data out Hi-Z after 2CLKs which should masked by CKE ”L”.
3. DQM masks both data-in and data-out.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0 18/46
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
