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M12S128168A_08 参数 Datasheet PDF下载

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型号: M12S128168A_08
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1036 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12S128168A  
Page Read Cycle at Different Bank @ Burst Length = 4  
Note: 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.  
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2008  
Revision: 1.1 33/45  
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