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M12S128168A_08 参数 Datasheet PDF下载

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型号: M12S128168A_08
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 45 页 / 1036 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12S128168A  
Read & Write Cycle at Same Bank @ Burst Length = 4  
*Note :  
1. Minimum row cycle times is required to complete internal DRAM operation.  
2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row  
precharge. Last valid output will be Hi-Z (tSHZ) after the clock.  
3. Output will be Hi-Z after the end of burst. (1,2,4,8 & Full page bit burst)  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2008  
Revision: 1.1 31/45  
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