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M12L16161A-5TIG 参数 Datasheet PDF下载

M12L16161A-5TIG图片预览
型号: M12L16161A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 698 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L16161A  
Operation temperature condition -40~85℃  
Important Notice  
All rights reserved.  
No part of this document may be reproduced or duplicated in any form or by  
any means without the prior permission of ESMT.  
The contents contained in this document are believed to be accurate at the  
time of publication. ESMT assumes no responsibility for any error in this  
document, and reserves the right to change the products or specification in  
this document without notice.  
The information contained herein is presented only as a guide or examples  
for the application of our products. No responsibility is assumed by ESMT for  
any infringement of patents, copyrights, or other intellectual property rights of  
third parties which may result from its use. No license, either express ,  
implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of ESMT or others.  
Any semiconductor devices may have inherently a certain rate of failure. To  
minimize risks associated with customer's application, adequate design and  
operating safeguards against injury, damage, or loss from such failure,  
should be provided by the customer when making application designs.  
ESMT's products are not authorized for use in critical applications such as,  
but not limited to, life support devices or system, where failure or abnormal  
operation may directly affect human lives or cause physical injury or property  
damage. If products described here are to be used for such kinds of  
application, purchaser must do its own quality assurance testing appropriate  
to such applications.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2007  
Revision : 1.1 29/29  
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