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M12L16161A-5TIG 参数 Datasheet PDF下载

M12L16161A-5TIG图片预览
型号: M12L16161A-5TIG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 29 页 / 698 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M12L16161A  
Operation temperature condition -40~85℃  
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page  
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C L O C K  
C K E  
H I G H  
C S  
RA S  
CA S  
RA a  
CA a  
A D D R  
BA  
CA b  
A10 /AP  
RA a  
tB D L  
tR D L  
* N o t e 2  
D Q  
DAa0  
DAb2 DAb3  
DAb0 DAb1  
DAb4  
DAa1 DAa2 DAa3 DAa4  
DAb5  
W E  
D Q M  
W ri t e  
( A - Ba n k )  
Ro w A c t i ve  
( A- B an k )  
Bu rst Sto p  
W ri t e  
( A - Ba n k )  
Pr echarg e  
( A- B an k )  
:D on ' t C ar e  
*Note: 1. Burst can’t end in full page mode, so auto precharge can’t issue.  
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by  
AC parameter of tRDL.  
DQM at write interrupted by precharge command is needed to prevent invalid write.  
Input data after Row precharge cycle will be masked internally.  
3.Burst stop is valid at every burst length.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : May. 2007  
Revision : 1.1 22/29  
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