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F49L160UA_1 参数 Datasheet PDF下载

F49L160UA_1图片预览
型号: F49L160UA_1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8 / 1M ×16 ) 3V只有CMOS闪存 [16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L160UA/F49L160BA  
Operation Temperature condition -40°C~85°C  
8. ABSOLUTE MAXIMUM RATINGS  
Storage Temperature  
20 ns. See Figure 2.  
Plastic Packages . . . . . . . . . . . . . . –65°C to +150°C  
Ambient Temperature  
with Power Applied. . . . . . . .. . . . . . –65°C to +125°C  
Voltage with Respect to Ground  
2. Minimum DC input voltage on pins A9,  
, and  
OE  
is -0.5 V. During voltage transitions, A9,  
,
RESET  
and  
OE  
may overshoot V to –2.0 V for periods  
RESET  
SS  
of up to 20 ns. See Figure 1. Maximum DC input  
voltage on pin A9 is +10.5 V which may overshoot to  
14.0 V for periods up to 20 ns.  
VCC (Note 1) . . . . . . . . . . .–0.5 V to +4.0 V  
A9,  
,
OE  
and  
(Note 2) …. . . .. . . . . –0.5 V to +10.5 V  
RESET  
3. No more than one output may be shorted to ground at  
a time. Duration of the short circuit should not be  
greater than one second.  
All other pins (Note 1). . . . . . . . . . –0.5 V to VCC +0.5 V  
Output Short Circuit Current (Note 3) .. . .. 200 mA  
Notes:  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
This is a stress rating only; functional operation of the  
device at these or any other conditions above those  
indicated in the operational sections of this data sheet is  
not implied. Exposure of the device to absolute maximum  
rating conditions for extended periods may affect device  
reliability.  
1. Minimum DC voltage on input or I/O pins  
is –0.5 V. During voltage transitions, input or  
I/O pins may overshoot V  
to –2.0 V for  
SS  
periods of up to 20 ns. See Figure 1. Maximum  
DC voltage on input or I/O pins is V +0.5 V.  
CC  
During voltage transitions, input or I/O pins  
may overshoot to V +2.0 V for periods up to  
CC  
Figure 1. Maximum Negative Overshoot Waveform  
20ns  
20ns  
+0 . 8 V  
- 0. 5V  
- 2. 0V  
20ns  
Figure 2. Maximum Positive Overshoot Waveform  
20ns  
Vc c  
+ 2 . 0 V  
Vc c  
+ 0 . 5 V  
2. 0V  
20ns  
20ns  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.4 22/51  
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