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F49L160UA_1 参数 Datasheet PDF下载

F49L160UA_1图片预览
型号: F49L160UA_1
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位( 2M ×8 / 1M ×16 ) 3V只有CMOS闪存 [16 Mbit (2M x 8/1M x 16) 3V Only CMOS Flash Memory]
分类和应用: 闪存
文件页数/大小: 51 页 / 459 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F49L160UA/F49L160BA  
Operation Temperature condition -40°C~85°C  
OPERATING RANGES  
Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . -40°C to +85°C  
VCC Supply Voltages VCC for all devices . . . . . . . . . . . . . . . . . . . . .3.0 V to 3.6 V  
Operating ranges define those limits between which the functionality of the device is guaranteed.  
Table 12. Capacitance TA = 25°C , f = 1.0 MHz  
Symbol  
CIN1  
Description  
Conditions  
VIN = 0V  
Min.  
Typ.  
Max.  
8
Unit  
pF  
Input Capacitance  
CIN2  
Control Pin Capacitance  
Output Capacitance  
VIN = 0V  
12  
pF  
COUT  
VOUT = 0V  
12  
pF  
9. DC CHARACTERISTICS  
Table 13. DC Characteristics TA = -40°C to 85°C, VCC = 3.0V to 3.6V  
Symbol  
ILI  
Description  
Conditions  
VIN = VSS or VCC, VCC = VCC max.  
VCC = VCC max; A9=10.5V  
VOUT = VSS or VCC, VCC = VCC max  
@5MHz  
Min.  
Typ.  
Max.  
±1  
Unit  
uA  
Input Leakage Current  
A9 Input Leakage Current  
Output Leakage Current  
ILIT  
35  
uA  
ILO  
±1  
uA  
9
2
25  
mA  
= VIL,  
= VIH  
OE  
CE  
( Byte Mode )  
@1MHz  
5
mA  
ICC1  
VCC Active Read Current  
@5MHz  
@1MHz  
9
2
40  
5
mA  
mA  
mA  
uA  
= VIL,  
= VIH  
OE  
CE  
( Word Mode )  
50±  
100  
ICC2  
ICC3  
VCC Active write Current  
VCC Standby Current  
= VIL,  
= VIH  
20  
25  
CE  
OE  
;
= VCC ±±0.3V  
CE RESET  
V
CC Standby Current  
During Reset  
= VSS ±±0.3V  
ICC4  
25  
25  
100  
uA  
RESET  
ICC5  
VIL  
Automatic sleep mode  
Input Low Voltage(Note 1)  
Input High Voltage  
VIH = VCC ±±0.3V; VIL = VSS ±±0.3V  
100  
0.8  
uA  
V
-0.5  
VIH  
0.7x VCC  
VCC + 0.3  
V
Voltage for Auto-Select  
and Temporary Sector  
Unprotect  
VID  
VCC =3.3V  
10  
10.5  
0.45  
V
V
VOL  
VOH1  
VOH2  
VLKO  
Output Low Voltage  
Output High Voltage(TTL)  
Output High Voltage  
IOL = 4.0mA, VCC = VCC min  
IOH = -2mA, VCC = VCC min  
IOH = -100uA, VCC min  
0.7x VCC  
VCC -0.4  
2.3  
Low VCC Lock-out Voltage  
2.5  
V
Notes :  
1. VIL min. = -1.0V for pulse width is equal to or less than 50 ns.  
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.  
2. VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns  
If VIH is over the specified maximum value, read operation cannot be guaranteed.  
3. Automatic sleep mode enable the low power mode when addresses remain stable for tACC + 30 ns  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2008  
Revision: 1.4 23/51  
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