ESMT
(Preliminary)
F25S04PA
Table 12: AC OPERATING CHARACTERISTICS - Continued
Normal 33MHz Fast 50 MHz
Fast 86 MHz Fast 100 MHz
Symbol
Parameter
Unit
Min
Max
Min
Max
Min
Max
Min
Max
THLH
THHH
ns
ns
ns
ns
5
5
5
5
HOLD Low Hold Time
5
5
5
5
HOLD High Hold Time
3
THZ
6
6
6
6
6
6
6
6
HOLD Low to High-Z Output
3
TLZ
HOLD High to Low-Z Output
Output Hold from SCK Change
Output Valid from SCK
TOH
TV
TWHSL
0
0
0
0
ns
ns
ns
12
20
8
8
8
4
20
20
20
Write Protect Setup Time before CE Low
4
TSHWL
ns
100
15
3
100
15
3
100
15
3
100
15
3
Write Protect Hold Time after CE High
Write Status Register Time
TW
TDP
(typ.) 3
(typ.) 3
(typ.) 3
(typ.) 3
ms
us
3
CE High to Deep Power Down Mode
CE High to Standby Mode ( for DP)
CE High to Standby Mode (for RES)
3
TRES1
us
us
3
3
3
3
3
TRES2
1.8
1.8
1.8
1.8
Note:
1. Relative to SCK.
2. TSCKH + TSCKL must be less than or equal to 1/ FCLK
.
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a Write status Register instruction when Block- Protection-Look (BPL) bit is set at 1.
ERASE AND PROGRAMMING PERFORMANCE
Limit
Parameter
Symbol
Unit
Typ2
Max3
Sector Erase Time
TSE
TBE
TCE
TBP
TPP
40
100
2
ms
s
Block Erase Time
0.4
Chip Erase Time
3
7
s
Byte Programming Time
Page Programming Time
Chip Programming Time
Erase/Program Cycles1
Data Retention
7
0.8
10
3
us
ms
s
3
5
100,000
20
-
Cycles
Years
-
Notes:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 2.5V.
3. Maximum values measured at 85°C, 2.3V.
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2009
Revision: 0.2 24/34
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
