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F25S04PA-86DG 参数 Datasheet PDF下载

F25S04PA-86DG图片预览
型号: F25S04PA-86DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25S04PA  
Table 10: RECOMMENDED SYSTEM POWER-UP TIMINGS  
Symbol  
Parameter  
Minimum  
Unit  
µs  
1
TPU-READ  
VDD Min to Read Operation  
VDD Min to Write Operation  
10  
10  
1
TPU-WRITE  
µs  
Table 11: CAPACITANCE (TA = 25°C, f=1 MHz, other pins open)  
Parameter  
Description  
Test Condition  
VOUT = 0V  
Maximum  
8 pF  
1
COUT  
Output Pin Capacitance  
Input Capacitance  
1
CIN  
VIN = 0V  
6 pF  
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.  
Table 12: AC OPERATING CHARACTERISTICS  
Normal 33MHz Fast 50 MHz  
Fast 86 MHz Fast 100 MHz  
Symbol  
Parameter  
Unit  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
FCLK  
Serial Clock Frequency  
33  
50  
86  
100  
MHz  
ns  
2
TSCKH  
Serial Clock High Time  
13  
13  
0.1  
0.1  
5
9
9
5
5
4
4
2
TSCKL  
Serial Clock Low Time  
ns  
TCLCH  
TCHCL  
Clock Rise Time (Slew Rate)  
Clock Fall Time (Slew Rate)  
0.1  
0.1  
5
0.1  
0.1  
5
0.1  
0.1  
5
V/ns  
V/ns  
ns  
1
TCES  
CE Active Setup Time  
CE Active Hold Time  
CE Not Active Setup Time  
CE Not Active Hold Time  
CE High Time  
1
TCEH  
5
5
5
5
ns  
1
TCHS  
5
5
5
5
ns  
1
TCHH  
5
5
5
5
ns  
TCPH  
TCHZ  
TCLZ  
TDS  
100  
100  
100  
100  
ns  
6
6
6
6
ns  
CE High to High-Z Output  
SCK Low to Low-Z Output  
Data In Setup Time  
0
2
5
5
5
0
2
5
5
5
0
2
5
5
5
0
2
5
5
5
ns  
ns  
TDH  
Data In Hold Time  
ns  
THLS  
THHS  
ns  
HOLD Low Setup Time  
HOLD High Setup Time  
ns  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2 23/34  
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