欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25S04PA-86DG 参数 Datasheet PDF下载

F25S04PA-86DG图片预览
型号: F25S04PA-86DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25S04PA-86DG的Datasheet PDF文件第23页浏览型号F25S04PA-86DG的Datasheet PDF文件第24页浏览型号F25S04PA-86DG的Datasheet PDF文件第25页浏览型号F25S04PA-86DG的Datasheet PDF文件第26页浏览型号F25S04PA-86DG的Datasheet PDF文件第28页浏览型号F25S04PA-86DG的Datasheet PDF文件第29页浏览型号F25S04PA-86DG的Datasheet PDF文件第30页浏览型号F25S04PA-86DG的Datasheet PDF文件第31页  
ESMT  
(Preliminary)  
F25S04PA  
VCC  
VCC (max)  
Program, Erase and Write command is ignored  
CE must track VCC  
VCC (min)  
Read command  
is allowed  
T
VSL  
Device is fully  
accessible  
Reset  
State  
VWI  
T
PUW  
Time  
Figure 24: Power-Up Timing Diagram  
Table 13: Power-Up Timing and VWI Threshold  
Unit  
Parameter  
Symbol  
Min.  
10  
1
Max.  
TVSL  
TPUW  
VWI  
us  
ms  
V
VCC(min) to CE low  
Time Delay before Write instruction  
10  
2
Write Inhibit Threshold Voltage  
1
Note: These parameters are characterized only.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2 27/34  
 复制成功!