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F25S04PA-86DG 参数 Datasheet PDF下载

F25S04PA-86DG图片预览
型号: F25S04PA-86DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25S04PA  
„ ELECTRICAL SPECIFICATIONS  
Absolute Maximum Stress Ratings  
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.  
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the  
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device  
reliability.)  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C  
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V  
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V  
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W  
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C  
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )  
AC CONDITIONS OF TEST  
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns  
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for 75MHz  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for 50MHz  
See Figures 28 and 29  
OPERATING RANGE  
Parameter  
Symbol  
VDD  
Value  
2.3 ~ 3.3  
0 ~ 70  
Unit  
Operating Supply Voltage  
Ambient Operating Temperature  
V
TA  
Table 9: DC OPERATING CHARACTERISTICS  
Limits  
Max  
Symbol  
Parameter  
Test Condition  
Min  
Unit  
Read Current  
@33 MHz  
Read Current  
@ 50MHz  
Read Current  
@ 86MHz  
Standard  
Dual  
Standard  
Dual  
Standard  
Dual  
Standard  
Dual  
3
4
6
IDDR1  
IDDR2  
IDDR3  
IDDR4  
mA  
mA  
mA  
mA  
CE =0.1 VDD/0.9 VDD, SO=open  
CE =0.1 VDD/0.9 VDD, SO=open  
CE =0.1 VDD/0.9 VDD, SO=open  
CE =0.1 VDD/0.9 VDD, SO=open  
8
10  
12  
20  
25  
Read Current  
@ 100MHz  
IDDW  
ISB1  
ISB2  
Program and Erase Current  
Standby Current  
15  
5
mA  
µA  
µA  
CE =VDD  
CE =VDD, VIN =VDD or VSS  
Deep Power Down Current  
5
CE =VDD, VIN =VDD or VSS  
±2  
±2  
ILI  
ILO  
VIL  
VIH  
VOL  
VOH  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
µA VIN=GND to VDD, VDD=VDD Max  
µA VOUT=GND to VDD, VDD=VDD Max  
V
V
V
V
VDD=VDD Min  
VDD=VDD Max  
IOL= 1.6mA, VDD=VDD Min  
IOH=-100 µA, VDD=VDD Min  
-0.5  
0.7 x VDD  
0.3 x VDD  
VDD +0.4  
0.4  
VDD-0.2  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2 22/34  
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