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F25S04PA-86DG 参数 Datasheet PDF下载

F25S04PA-86DG图片预览
型号: F25S04PA-86DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25S04PA  
„ GENERAL DESCRIPTION  
The F25S04PA is a 4Megabit, 2.5V only CMOS Serial Flash  
memory device. The device supports the standard Serial  
Peripheral Interface (SPI), and a Dual SPI. ESMT’s memory  
devices reliably store memory data even after 100,000  
programming and erase cycles.  
is divided into 128 uniform sectors with 4K byte each; 8 uniform  
blocks with 64K byte each. Sectors can be erased individually  
without affecting the data in other sectors. Blocks can be erased  
individually without affecting the data in other blocks. Whole chip  
erase capabilities provide the flexibility to revise the data in the  
device. The device has Sector, Block or Chip Erase but no page  
erase.  
The memory array can be organized into 2,048 programmable  
pages of 256 byte each. 1 to 256 byte can be programmed at a  
time with the Page Program instruction.  
The sector protect/unprotect feature disables both program and  
erase operations in any combination of the sectors of the  
memory.  
The device features sector erase architecture. The memory array  
„ PIN CONFIGURATIONS  
8- LEAD SOIC  
1
8
VDD  
CE  
HOLD  
SCK  
SO  
2
3
7
6
WP  
SI  
VSS  
4
5
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2  
2/34  
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