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F25S04PA-86DG 参数 Datasheet PDF下载

F25S04PA-86DG图片预览
型号: F25S04PA-86DG
PDF下载: 下载PDF文件 查看货源
内容描述: 2.5V只有4兆位串行闪存,带有双输出 [2.5V Only 4 Mbit Serial Flash Memory with Dual Output]
分类和应用: 闪存
文件页数/大小: 34 页 / 382 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
(Preliminary)  
F25S04PA  
„ STATUS REGISTER  
The software status register provides status on whether the flash  
memory array is available for any Read or Write operation,  
whether the device is Write enabled, and the state of the memory  
Write protection. During an internal Erase or Program operation,  
the status register may be read only to determine the completion  
of an operation in progress. Table 2 describes the function of  
each bit in the software status register.  
Table 2: Software Status Register  
Default at  
Power-up  
Bit  
0
Name  
BUSY  
WEL  
Function  
Read/Write  
1 = Internal Write operation is in progress  
0 = No internal Write operation is in progress  
1 = Device is memory Write enabled  
0 = Device is not memory Write enabled  
0
0
R
R
1
2
3
4
5
6
BP0  
BP1  
BP2  
TB  
Indicate current level of block write protection (See Table 3)  
Indicate current level of block write protection (See Table 3)  
Indicate current level of block write protection (See Table 3)  
Top / Bottom write protect  
0
0
0
0
0
R/W  
R/W  
R/W  
R/W  
N/A  
RESERVED Reserved for future use  
1 = BP2,BP1,BP0 and TB are read-only bits  
0 = BP2,BP1,BP0 and TB are read/writable  
7
BPL  
0
R/W  
Note:  
1. Only BP0, BP1, BP2, TB and BPL are writable.  
2. BP0, BP1, BP2, TB and BPL are non-volatile; others volatile.  
3. All area are protected at power-on (BP2=BP1=BP0=1)  
WRITE ENABLE LATCH (WEL)  
BUSY  
The Write-Enable-Latch bit indicates the status of the internal  
memory Write Enable Latch. If this bit is set to “1”, it indicates the  
device is Write enabled. If the bit is set to “0” (reset), it indicates  
the device is not Write enabled and does not accept any memory  
Write (Program/ Erase) commands. This bit is automatically reset  
under the following conditions:  
The Busy bit determines whether there is an internal Erase or  
Program operation in progress. A “1” for the Busy bit indicates  
the device is busy with an operation in progress. A “0” indicates  
the device is ready for the next valid operation.  
Power-up  
Top/Bottom Block Protect (TB)  
Write Disable (WRDI) instruction completion  
Page Program instruction completion  
Sector Erase instruction completion  
Block Erase instruction completion  
Chip Erase instruction completion  
Write Status Register instructions  
The Top/Bottom bit (TB) controls if the Block-Protection (BP2,  
BP1, BP0) bits protect from the Top (TB=0) or the Bottom (TB=1)  
of the array as show in Table 3, The TB bit can be set with Write  
Status Register (WRSR) instruction. The TB bit can not be written  
to if the Block- Protection-Look (BPL) bit is 1 or WP is low.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: May 2009  
Revision: 0.2  
6/34  
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