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F25L32PA-100PAG 参数 Datasheet PDF下载

F25L32PA-100PAG图片预览
型号: F25L32PA-100PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有32兆位串行闪存,配有双 [3V Only 32 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存存储
文件页数/大小: 36 页 / 373 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L32PA  
Write Enable (WREN)  
The Write Enable (WREN) instruction sets the Write-Enable-  
Latch bit in the Software Status Register to 1 allowing Write  
operations to occur.  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
The WREN instruction must be executed prior to any Write  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
Figure 21: Write Enable (WREN) Sequence  
Write Disable (WRDI)  
The Write Disable (WRDI) instruction resets the Write-Enable-  
Latch bit to 0 disabling any new Write operations from occurring.  
CE must be driven high before the WRDI instruction is  
executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
SCK  
SI  
MODE0  
04  
MSB  
HIGH IMPENANCE  
SO  
Figure 22: Write Disable (WRDI) Sequence  
Enable Write Status Register (EWSR)  
The Enable Write Status Register (EWSR) instruction arms the  
Write Status Register (WRSR) instruction and opens the status  
register for alteration. The Enable Write Status Register  
instruction does not have any effect and will be wasted, if it is not  
followed immediately by the Write Status Register (WRSR)  
instruction. CE must be driven low before the EWSR instruction  
is entered and must be driven high before the EWSR instruction  
is executed.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Mar. 2009  
Revision: 1.0  
21/36  
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