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F25L32PA-100PAG 参数 Datasheet PDF下载

F25L32PA-100PAG图片预览
型号: F25L32PA-100PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有32兆位串行闪存,配有双 [3V Only 32 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存存储
文件页数/大小: 36 页 / 373 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L32PA  
Write-Status-Register (WRSR)  
The Write Status Register instruction writes new values to the  
BP2, BP1, BP0, BPL (Status Register) bits of the status register.  
When WP is high, the lock-down function of the BPL bit is  
disabled and the BPL, BP0, BP1,and BP2 bits in the status  
CE must be driven low before the command sequence of the  
WRSR instruction is entered and driven high before the WRSR  
register can all be changed. As long as BPL bit is set to 0 or WP  
pin is driven high (VIH) prior to the low-to-high transition of the  
instruction is executed. CE must be driven high after the eighth  
bit of data that is clocked in. If it is not done, the WRSR  
instruction will not be issued. See Figure 23 for EWSR or WREN  
and WRSR instruction sequences.  
CE pin at the end of the WRSR instruction, the bits in the status  
register can all be altered by the WRSR instruction. In this case,  
a single WRSR instruction can set the BPL bit to “1” to lock down  
the status register as well as altering the BP0; BP1 and BP2 bits  
Executing the Write Status Register instruction will be ignored  
at the same time. See Table 4 for a summary description of WP  
and BPL functions.  
when WP is low and BPL bit is set to “1”. When the WP is  
low, the BPL bit can only be set from “0” to “1” to lock down the  
status register, but cannot be reset from “1” to “0”.  
CE  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
7
9 10 11 12 13 14 15  
MODE3  
MODE0  
SCK  
Stauts Register  
Data In  
50 or 06  
01  
6
4
3
2
0
1
SI  
5
MSB  
MSB  
HIGH IMPENANCE  
SO  
Figure 23: Enable-Write-Status-Register (EWSR) or Write-Enable (WREN) and Write-Status-Register (WRSR)  
Enter OTP Mode (ENSO)  
The ENSO (B1H) instruction is for entering the additional 2K  
bytes secured OTP mode. The additional 2K bytes secured OTP  
sector is independent from main array, which may use to store  
unique serial number for system identifier. User must unprotect  
whole array (BP0=BP1=BP2=0), prior to any Write (Program/  
Erase) operation in OTP sector. After entering the secured OTP  
mode, only the secured OTP sector can be accessed and user  
can follow the standard Read or Write procedure except for Block  
Erase and Chip Erase. The secured OTP data cannot be  
updated again once it is lock down. In secured OTP mode,  
WRSR command will ignore the input data and lock down the  
secured OTP sector (OTP_lock bit =1). To exit secured OTP  
mode, user must execute WRDI command. RES can be used to  
verify the secured OTP status as shown in Table 6.  
Figure 24: Enter OTP Mode (ENSO) Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Mar. 2009  
Revision: 1.0  
22/36  
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