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F25L16PA-50HG2S 参数 Datasheet PDF下载

F25L16PA-50HG2S图片预览
型号: F25L16PA-50HG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 42 页 / 402 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L16PA (2S)  
Write Status Register (WRSR)  
The Write Status Register instruction writes new values to the  
BP3, BP2, BP1, BP0 and BPL (Status Register) bits of the status  
When WP is high, the lock-down function of the BPL bit is  
disabled and the BPL, BP0, BP1, BP2 and BP3 bits in the status  
register. CE must be driven low before the command sequence  
of the WRSR instruction is entered and driven high before the  
register can all be changed. As long as BPL bit is set to 0 or WP  
pin is driven high (VIH) prior to the low-to-high transition of the  
WRSR instruction is executed. CE must be driven high after the  
eighth or sixteenth bit of data that is clocked in. If it is not done,  
the WRSR instruction will not be issued. See Figure 17 for  
WREN and WRSR instruction sequences.  
CE pin at the end of the WRSR instruction, the bits in the status  
register can all be altered by the WRSR instruction. In this case,  
a single WRSR instruction can set the BPL bit to “1” to lock down  
the status register as well as altering the BP0; BP1, BP2 and BP3  
bits at the same time. See Table 4 for a summary description of  
Executing the Write Status Register instruction will be ignored  
WP and BPL functions.  
when WP is low and BPL bit is set to “1”. When the WP is  
low, the BPL bit can only be set from “0” to “1” to lock down the  
status register, but cannot be reset from “1” to “0”.  
CE  
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15  
MODE3  
MODE0  
SCK  
Stauts Register  
Data In  
06  
01  
7
6
4
3
2
0
1
SI  
5
MSB  
MSB  
HIGH IMPENANCE  
SO  
Figure 17: Write Enable (WREN) and Write Status Register (WRSR)  
Read Status Register (RDSR)  
The Read Status Register (RDSR) instruction allows reading of  
the status register. The status register may be read at any time  
even during a Write (Program/Erase) operation. When a Write  
operation is in progress, the BUSY bit may be checked before  
sending any new commands to assure that the new commands  
are properly received by the device.  
CE must be driven low before the RDSR instruction is entered  
and remain low until the status data is read. The RDSR  
instruction code is “05H” for Status Register. Read Status  
Register is continuous with ongoing clock cycles until it is  
terminated by a low to high transition of the CE . See Figure 18  
for the RDSR instruction sequence.  
CE  
MODE3  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14  
SCK MODE0  
05  
SI  
MSB  
HIGH IMPEDANCE  
SO  
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0  
MSB  
Status Register Data Out  
Figure 18: Read Status Register (RDSR) Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Nov. 2012  
Revision: 1.4 23/42  
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