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F25L16PA-50HG2S 参数 Datasheet PDF下载

F25L16PA-50HG2S图片预览
型号: F25L16PA-50HG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 42 页 / 402 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L16PA (2S)  
Write Enable (WREN)  
The Write Enable (WREN) instruction sets the Write-Enable-  
Latch bit in the Software Status Register to 1 allowing Write  
operations to occur.  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
The WREN instruction must be executed prior to any Write  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
Figure 15: Write Enable (WREN) Sequence  
Write Disable (WRDI)  
The Write Disable (WRDI) instruction resets the Write-Enable-  
Latch bit to 0 disabling any new Write operations from occurring  
or exits from OTP mode to normal mode.  
CE must be driven high before the WRDI instruction is  
executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
SCK  
SI  
MODE0  
04  
MSB  
HIGH IMPENANCE  
SO  
Figure 16: Write Disable (WRDI) Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Nov. 2012  
Revision: 1.4 22/42  
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