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F25L16PA-50HG2S 参数 Datasheet PDF下载

F25L16PA-50HG2S图片预览
型号: F25L16PA-50HG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 42 页 / 402 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L16PA (2S)  
Erase Suspend  
The Erase Suspend instruction allows the system to interrupt a  
Sector or Block Erase operation and then read from any other  
sector or block. The Write Status Register instruction and Sector /  
Block Erase instructions are not allowed during suspend. Erase  
Suspend is valid only during the Sector or Block Erase operation.  
If written during the Chip Erase or Program operation, the Erase  
Suspend instruction is ignored. A maximum of TSUS is required to  
suspend the erase operation. The BUSY bit in the Software  
Status Register will clear to “0” after Erase Suspend. A power-off  
during the suspend period will reset the device and release the  
suspend status.  
CE  
0
1
2
3
4
5
6
7
MODE3  
TSUS  
SCK MODE0  
SI  
75  
MSB  
HIGH IMPEDANCE  
SO  
Accept Read or Program Instruction  
Figure 13: Erase Suspend Instruction  
Erase Resume  
The Erase Resume instruction must be written to resume the  
Sector or Block Erase operation after Erase Suspend. After  
issued the BUSY bit in the Software Status Register will be set to  
“1” and the sector or block will complete the erase operation.  
Erase Resume instruction will be ignored unless an Erase  
Suspend operation is active.  
CE  
0
1
2
3
4
5
6
7
MODE3  
SCK MODE0  
SI  
7A  
MSB  
Resume Sector or Block Erase  
Figure 14: Erase Resume Instruction  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Nov. 2012  
Revision: 1.4  
21/42  
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