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F25L16PA-50HG2S 参数 Datasheet PDF下载

F25L16PA-50HG2S图片预览
型号: F25L16PA-50HG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 16MX1, PDSO8, 6 X 5 MM, 1.27 MM PITCH, ROHS COMPLIANT, WSON-8]
分类和应用: 时钟光电二极管内存集成电路
文件页数/大小: 42 页 / 402 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L16PA (2S)  
4K Byte Sector Erase  
The Sector Erase instruction clears all bits in the selected sector  
to FFH. A Sector Erase instruction applied to a protected memory  
area will be ignored. Prior to any Write operation, the Write  
[AMS -A12] (AMS = Most Significant address) are used to determine  
the sector address (SAX), remaining address bits can be VIL or  
VIH. CE must be driven high before the instruction is executed.  
The user may poll the BUSY bit in the Software Status Register  
or wait TSE for the completion of the internal self-timed Sector  
Erase cycle. See Figure 11 for the Sector Erase sequence.  
Enable (WREN) instruction must be executed. CE must remain  
active low for the duration of the any command sequence. The  
Sector Erase instruction is initiated by executing an 8-bit  
command, 20H, followed by address bits [A23 -A0]. Address bits  
CE  
0
1 2  
3
4
5
6
7 8  
15 16  
23 24  
31  
MODE3  
MODE0  
SCK  
ADD.  
ADD.  
ADD.  
20  
SI  
MSB  
MSB  
HIGH IMPENANCE  
SO  
Figure 11: 4K-byte Sector Erase Sequence  
Chip Erase  
The Chip Erase instruction clears all bits in the device to FFH. A  
Chip Erase instruction will be ignored if any of the memory area is  
protected. Prior to any Write operation, the Write Enable (WREN)  
Erase instruction is initiated by executing an 8-bit command, 60H  
or C7H. CE must be driven high before the instruction is  
executed. The user may poll the BUSY bit in the Software Status  
Register or wait TCE for the completion of the internal self-timed  
Chip Erase cycle. See Figure 12 for the Chip Erase sequence.  
instruction must be executed. CE must remain active low for  
the duration of the Chip Erase instruction sequence. The Chip  
CE  
0 1 2 3 4 5 6 7  
MODE3  
SCK  
SI  
MODE0  
60 or C7  
MSB  
HIGH IMPENANCE  
SO  
Figure 12: Chip Erase Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Nov. 2012  
Revision: 1.4 20/42  
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