欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L08PA-50PAG 参数 Datasheet PDF下载

F25L08PA-50PAG图片预览
型号: F25L08PA-50PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有8兆位串行闪存,配有双 [3V Only 8 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 32 页 / 489 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L08PA-50PAG的Datasheet PDF文件第14页浏览型号F25L08PA-50PAG的Datasheet PDF文件第15页浏览型号F25L08PA-50PAG的Datasheet PDF文件第16页浏览型号F25L08PA-50PAG的Datasheet PDF文件第17页浏览型号F25L08PA-50PAG的Datasheet PDF文件第19页浏览型号F25L08PA-50PAG的Datasheet PDF文件第20页浏览型号F25L08PA-50PAG的Datasheet PDF文件第21页浏览型号F25L08PA-50PAG的Datasheet PDF文件第22页  
ESMT  
F25L08PA  
Write Status Register (WRSR)  
The Write Status Register instruction writes new values to the  
When WP is high, the lock-down function of the BPL bit is  
disabled and the BPL, BP0, BP1,and BP2 bits in the status  
BP2, BP1, BP0, and BPL bits of the status register. CE must be  
driven low before the command sequence of the WRSR  
instruction is entered and driven high before the WRSR  
instruction is executed. See Figure 19 for EWSR or WREN and  
WRSR instruction sequences.  
register can all be changed. As long as BPL bit is set to 0 or WP  
pin is driven high (VIH) prior to the low-to-high transition of the  
CE pin at the end of the WRSR instruction, the bits in the status  
register can all be altered by the WRSR instruction. In this case,  
a single WRSR instruction can set the BPL bit to “1” to lock down  
the status register as well as altering the BP0; BP1 and BP2 bits  
Executing the Write Status Register instruction will be ignored  
when WP is low and BPL bit is set to “1”. When the WP is  
low, the BPL bit can only be set from “0” to “1” to lock down the  
status register, but cannot be reset from “1” to “0”.  
at the same time. See Table 4 for a summary description of WP  
and BPL functions.  
CE  
0 1 2 3 4 5 6 7 8 9 1011 12 13 1415  
MODE3  
0 1 2 3 4 5 6 7  
SCK MODE0  
STATUS  
REGISTER IN  
50 or 06  
7 6 5 4 3 2 1  
0
SI  
01  
MSB  
MSB  
HIGH IMPENANCE  
SO  
Figure 19: Enable Write Status Register (EWSR) or Write Enable (WREN) and Write Status Register (WRSR)  
Enter Secured OTP Mode (ENSO)  
The ENSO (B1H) instruction is for entering the additional 4K  
bytes secured OTP mode. The additional 4K bytes secured OTP  
sector is independent from main array, which may use to store  
unique serial number for system identifier. User must unprotect  
whole array (BP0=BP1=BP2=0), prior to any Program operation  
in OTP sector. After entering the secured OTP mode, only the  
secured OTP sector can be accessed and user can only follow  
the Read or Program procedure with OTP address range  
(address bits [A23 –A12] must be “0”). The secured OTP data  
cannot be updated again once it is lock down or has been  
programmed. In secured OTP mode, WRSR command will  
ignore the input data and lock down the secured OTP sector  
(OTP_lock bit =1). To exit secured OTP mode, user must  
execute WRDI command. RES can be used to verify the secured  
OTP status as shown in Table 6.  
Figure 20: Enter OTP Mode (ENSO) Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2009  
Revision: 1.7  
18/32  
 复制成功!