ESMT
F25L08PA
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 28 and 29
OPERATING RANGE
Parameter
Symbol
VDD (for FCLK <= 50MHz)
VDD (for FCLK = 100MHz)
TA
Value
2.7 ~ 3.6
3.0 ~3.6
0 ~ 70
Unit
V
Operating Supply Voltage
Ambient Operating Temperature
℃
Table 9: DC OPERATING CHARACTERISTICS
Limits
Max
15
Symbol
IDDR1
Parameter
Test Condition
Min
Unit
Read Current
Standard
Dual
mA
CE =0.1 VDD/0.9 VDD, SO=open
CE =0.1 VDD/0.9 VDD, SO=open
@33 MHz
18
20
23
Read Current
@ 50MHz
Standard
Dual
IDDR2
mA
Read Current
@ 100MHz
Program and Erase Current
Standard
Dual
25
28
IDDR3
IDDW
mA
mA
CE =0.1 VDD/0.9 VDD, SO=open
CE =VDD
35
ISB
ILI
ILO
VIL
VIH
VOL
VOH
Standby Current
30
1
1
µA
µA
µA
V
V
V
CE =VDD, VIN =VDD or VSS
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
0.8
0.7 x VDD
VDD-0.2
0.2
V
Table 10: LATCH UP CHARACTERISTIC
Symbol
Parameter
Minimum
Unit
Test Method
1
ILTH
Latch Up
100 + IDD
mA
JEDEC Standard 78
Note 1: This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2009
Revision: 1.7 22/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
