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F25L08PA-50PAG 参数 Datasheet PDF下载

F25L08PA-50PAG图片预览
型号: F25L08PA-50PAG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有8兆位串行闪存,配有双 [3V Only 8 Mbit Serial Flash Memory with Dual]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 32 页 / 489 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
F25L08PA  
Chip Erase  
The Chip Erase instruction clears all bits in the device to FFH. A  
Chip Erase instruction will be ignored if any of the memory area is  
protected. Prior to any Write operation, the Write Enable (WREN)  
Erase instruction is initiated by executing an 8-bit command, 60H  
or C7H. CE must be driven high before the instruction is  
executed. The user may poll the Busy bit in the Software Status  
Register or wait TCE for the completion of the internal self-timed  
Chip Erase cycle. See Figure 15 for the Chip Erase sequence.  
instruction must be executed. CE must remain active low for  
the duration of the Chip-Erase instruction sequence. The Chip  
CE  
0 1 2 3 4 5 6 7  
MODE3  
SCK  
SI  
MODE0  
60 or C7  
MSB  
HIGH IMPENANCE  
SO  
Figure 15: Chip Erase Sequence  
Read Status Register (RDSR)  
The Read Status Register (RDSR) instruction allows reading of  
the status register. The status register may be read at any time  
even during a Write (Program/Erase) operation.  
When a Write operation is in progress, the Busy bit may be  
checked before sending any new commands to assure that the  
new commands are properly received by the device.  
CE must be driven low before the RDSR instruction is entered  
and remain low until the status data is read. Read Status  
Register is continuous with ongoing clock cycles until it is  
terminated by a low to high transition of the CE . See Figure 16  
for the RDSR instruction sequence.  
Figure 16: Read Status Register (RDSR) Sequence  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jul. 2009  
Revision: 1.7  
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