欢迎访问ic37.com |
会员登录 免费注册
发布采购

F25L04UA-75PG 参数 Datasheet PDF下载

F25L04UA-75PG图片预览
型号: F25L04UA-75PG
PDF下载: 下载PDF文件 查看货源
内容描述: 3V只有4兆位串行闪存 [3V Only 4 Mbit Serial Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 25 页 / 271 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号F25L04UA-75PG的Datasheet PDF文件第10页浏览型号F25L04UA-75PG的Datasheet PDF文件第11页浏览型号F25L04UA-75PG的Datasheet PDF文件第12页浏览型号F25L04UA-75PG的Datasheet PDF文件第13页浏览型号F25L04UA-75PG的Datasheet PDF文件第15页浏览型号F25L04UA-75PG的Datasheet PDF文件第16页浏览型号F25L04UA-75PG的Datasheet PDF文件第17页浏览型号F25L04UA-75PG的Datasheet PDF文件第18页  
ESMT  
F25L04UA  
Write-Enable (WREN)  
The Write-Enable (WREN) instruction sets the Write-  
Enable-Latch bit to 1 allowing Write operations to occur.  
The WREN instruction must be executed prior to any Write  
(Program/Erase) operation. CE must be driven high before the  
WREN instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
06  
MSB  
HIGH IMPENANCE  
SO  
FIGURE 11 : WRITE ENABLE (WREN) SEQUENCE  
Write-Disable (WRDI)  
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch  
bit and AAI bit to 0 disabling any new Write operations from occurring.  
CE must be driven high before the WRDI instruction is executed.  
CE  
0 1 2 3 4 5 6 7  
MODE3  
MODE0  
SCK  
SI  
04  
MSB  
HIGH IMPENANCE  
SO  
Figure 12 : WRITE DISABLE (WRDI) SEQUENCE  
Enable-Write-Status-Register (EWSR)  
The Enable-Write-Status-Register (EWSR) instruction arms the  
Write-Status-Register (WRSR) instruction and opens the status  
register for alteration. The Enable-Write-Status-Register  
instruction does not have any effect and will be wasted, if it is not  
followed immediately by the Write-Status-Register (WRSR)  
instruction. CE must be driven low before the EWSR instruction  
is entered and must be driven high before the EWSR instruction  
is executed.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Jan. 2009  
Revision: 1.2  
14/25  
 复制成功!