ESMT
F25L04UA
Auto Address Increment (AAI) Program
The AAI program instruction allows multiple bytes of data to be
programmed without re-issuing the next sequential address
location. This feature decreases total programming time when
the entire memory array is to be programmed. An AAI program
instruction pointing to a protected memory area will be ignored.
The selected address range must be in the erased state (FFH)
when initiating an AAI program instruction.
Prior to any write operation, the Write-Enable (WREN) instruction
must be executed. The AAI program instruction is initiated by
executing an 8-bit command, AFH, followed by address bits
[A23-A0]. Following the addresses, the data is input sequentially
BUSY bit in the software status register or wait TBP for the
completion of each internal self-timed Byte-Program cycle. Once
the device completes programming byte, the next sequential
address may be program, enter the 8-bit command, AFH,
followed by the data to be programmed. When the last desired
byte had been programmed, execute the Write-Disable (WRDI)
instruction, 04H, to terminate AAI. After execution of the WRDI
command, the user must poll the Status register to ensure the
device completes programming. See Figure
programming sequence.
7
for AAI
There is no wrap mode during AAI programming; once the
highest unprotected memory address is reached, the device will
exit AAI operation and reset the Write-Enable-Latch bit (WEL = 0).
from MSB (bit 7) to LSB (bit 0). CE must be driven high before
the AAI program instruction is executed. The user must poll the
TBP
TBP
CE
15 16
31 32 333435 36 373839
MODE3
0
1
2
3
4
5
6
7
8
23 24
0
1
2
3
4
5
6
7
8
9 10 11 1213 14 15
Data Byte 2
0 1
SCK MODE0
AF
A[23,16]
A[15,8]
A[7,0]
Da ta Byte 1
AF
SI
TBP
CE
SCK
SI
0
1
2
3
4
5
6
7
8
9 101112 1314 15
Last Data Byte
0
1
2
3
4
5
6
7
8
9 10 11 1213 14 15
0
1
2
3
4
5 6 7
AF
05
04
Read Status Register(RDSR)
Instruction to verify end of
AAI Operation
Write Disable (WRDI)
Instruction to terminate
AAI Operation
DOUT
SO
Figure 7 : AUTO ADDRESS INCREMENT (AAI) PROGRAM SEQUENCE
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.2 11/25
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
