ESMT
F25L08QA (2S)
TABLE 14: AC OPERATING CHARACTERISTICS - Continued
Normal 33MHz Fast 50 MHz
Fast 86 MHz
Fast 100 MHz
Symbol
Parameter
Unit
Min
Max
Min
Max
Min
Max
Min
Max
TOH
TV
Output Hold from SCK Change
0
0
0
0
ns
ns
ns
ns
us
us
us
us
Output Valid from SCK
12
8
8
8
4
TWHSL
20
20
20
20
Write Protect Setup Time before CE Low
Write Protect Hold Time after CE High
CE High to Deep Power Down Mode
CE High to Standby Mode ( for DP)
CE High to Standby Mode (for RES)
CE High to next Instruction after Suspend
4
TSHWL
100
100
100
100
3
TDP
3
3
3
3
3
3
3
3
3
TRES1
3
TRES2
1.8
20
1.8
20
1.8
20
1.8
20
3
TSUS
Note:
1. Relative to SCK.
2. TSCKH + TSCKL must be less than or equal to 1/ FCLK
.
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a Write status Register instruction when Block- Protection-Look (BPL) bit is set at 1.
TABLE 15: ERASE AND PROGRAMMING PERFORMANCE
Limit
Unit
Parameter
Symbol
Typ2
Max3
250
1000
1.5
15
Sector Erase Time (4KB)
TSE
TBE1
TBE2
TCE
TW
90
ms
ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
500
0.75
7
s
s
Write Status Register Time
Page Programming Time
Erase/Program Cycles1
Data Retention
10
15
ms
TPP
1.5
5
ms
100,000
20
-
Cycles
Years
-
Notes:
1. Not 100% Tested, Excludes external system level over head.
2. Typical values measured at 25°C, 3V.
3. Maximum values measured at 85°C, 2.7V.
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 1.2 34/43
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
