ESMT
F25L08QA (2S)
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings
(Applied conditions are greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device
reliability.)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Output Short Circuit Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
( Note 1: Output shorted for no more than one second. No more than one output shorted at a time. )
TABLE 9: AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz
See Figures 34 and 35
TABLE 10: OPERATING RANGE
Parameter
Symbol
VDD
Value
Unit
2.7 ~ 3.6
-40 ~ +85
Operating Supply Voltage
Ambient Operating Temperature
V
℃
TA
TABLE 11: DC OPERATING CHARACTERISTICS
Limits
Max
Symbol
Parameter
Test Condition
Min
Unit
Standard
Dual
Quad
Standard
Dual
Quad
Standard
Dual
Quad
9
10.5
12
10
12
13.5
15
16.5
18
Read Current
@ 33MHz
IDDR1
mA
mA
mA
CE =0.1 VDD/0.9 VDD, SO=open
Read Current
@ 50MHz
IDDR2
CE =0.1 VDD/0.9 VDD, SO=open
CE =0.1 VDD/0.9 VDD, SO=open
Read Current
@ 86MHz
IDDR3
Standard
Dual
Quad
22
23.5
25
Read Current
@ 100MHz
IDDR4
IDDW
IDDE
mA
mA
CE =0.1 VDD/0.9 VDD, SO=open
CE =VDD
Program and Write Status
Register Current
20
Sector and Block Erase Current
Chip Erase Current
20
20
25
10
mA
mA
µA
CE =VDD
CE =VDD
ISB1
ISB2
Standby Current
CE =VDD, VIN =VDD or VSS
CE =VDD, VIN =VDD or VSS
Deep Power Down Current
µA
ILI
ILO
VIL
VIH
VOL
VOH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V
V
-0.5
0.7 x VDD
0.3 x VDD
VDD +0.4
0.4
V
V
IOL=1.6 mA
IOH=-100 µA
VDD-0.2
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 1.2 32/43
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
