EN29LV160A
Revisions List
Revision No
Description
Date
A
B
Preliminary draft
Initial Release
2004/10/01
2004/11/26
1. Update Eon logo.
2. Correct a typo on page 39, dimension E and N corrected.
C
2005/01/07
1. Modify tWP parameter on the table 13 at page 30
2. Remove ,Unlock Bypass, Unlock Bypass Program, and
Unlock Bypass Reset, commands from Table 9.
3. Remove description of Unlock Bypass
1. Add tRPD parameter in the table on page 27
2. Change the FBGA package dimension to enhance the BGA
substrate and ball strength, the difference is
2.1. Package Thickness A : 1.10 mm to 1.31 mm
2.2. Ball size b : 0.3 mm to 0.4 mm
D
2006/02/03
2006/05/16
E
1. change the max. program time from 300uS to 200uS
at page 30,31 and 32
2. remove Icc2 ( standby-TTL ) from table 11 page 25
Add 44 pins SOP package at page 1,page 2 , page 39 and page
44
F
2006/12/08
2007/01/18
G
1. Add the tBUSY description in Table 13. Write (Erase/Program)
Operations in page 31
2. Correct the Figure 7. Program Operation Timings in page 35
3. Update 48 pin TSOP-I package outline in page 40
4. Change the FBGA 48 Ball package thickness from 1.31mm to
1.30mm in page 41
H
I
2008/07/07
Modify Figure 5. AC Waveforms for READ Operations in page 30 2008/7/17
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
44
Rev. I, Issue Date: 2008/07/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
