EN29LV160A
Table 14. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE# Controlled Writes
Parameter
Symbols
Speed Options
Description
Write Cycle Time
JEDEC
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
Standard
-70
-90
Unit
Min
Min
Min
Min
Min
Min
70
90
ns
tWC
0
45
30
0
0
45
45
0
ns
ns
ns
ns
ns
tAS
Address Setup Time
Address Hold Time
Data Setup Time
tAH
tDS
tDH
Data Hold Time
0
0
tOES
Output Enable Setup Time
0
0
10
0
0
10
0
ns
ns
ns
Output Enable
Hold Time
Read
tOEH
Toggle and
Data Polling
10
Read Recovery Time before
Write (OE# High to CE# Low)
Min
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
tGHEL
tWS
tWH
tCP
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
0
0
0
0
ns
ns
ns
ns
µs
µs
s
WE# SetupTime
WE# Hold Time
35
20
8
45
20
8
Write Pulse Width
Write Pulse Width High
tCPH
Programming Operation
(Byte AND word mode)
tWHWH1 tWHWH1
tWHWH2 tWHWH2
tWHWH3 tWHWH3
200
0.5
10
17.5
200
0.5
10
17.5
Sector Erase Operation
s
s
Chip Erase Operation
Vcc Setup Time
s
Min
Min
50
50
µs
ns
tVCS
500
500
tVIDR
Rise Time to V
ID
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
32
Rev. I, Issue Date: 2008/07/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
