EN29LV160A
Table 13. AC CHARACTERISTICS
Write (Erase/Program) Operations
Parameter
Symbols
Speed Options
JEDEC
Standard Description
-70
-90
Unit
Min
Min
Min
Min
Min
Min
70
90
ns
tAVAV
tWC
tAS
Write Cycle Time
0
45
30
0
0
45
45
0
ns
ns
ns
ns
ns
tAVWL
tWLAX
tDVWH
tWHDX
Address Setup Time
Address Hold Time
Data Setup Time
tAH
tDS
tDH
tOES
Data Hold Time
0
0
Output Enable Setup Time
MIn
Min
0
0
ns
ns
Read
Output Enable
Toggle and
Hold Time
tOEH
10
10
DATA# Polling
Read Recovery Time before
Write (OE# High to WE# Low)
Min
Min
Min
Min
Min
0
0
0
0
ns
ns
ns
ns
ns
tGHWL
tELWL
tWHEH
tWLWH
tWHDL
tGHWL
tCS
CE# SetupTime
CE# Hold Time
0
0
tCH
35
20
35
20
tWP
Write Pulse Width
tWPH
Write Pulse Width High
Typ
8
8
µs
Programming Operation
(Word AND Byte Mode)
tWHWH1 tWHWH1
Max
Typ
Max
200
0.5
10
200
0.5
10
µs
s
tWHWH2 tWHWH2
tWHWH3 tWHWH3
Sector Erase Operation
s
Typ
17.5
17.5
s
Chip Erase Operation
Vcc Setup Time
Min
Min
Min
50
500
70
50
500
90
µs
ns
ns
tVCS
tVIDR
Rise Time to V
ID
tBUSY
B
WE# High to RY/BY# Low
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
31
Rev. I, Issue Date: 2008/07/17
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
