EM47FM3288SBB
Ball Description (Continued)
(Data Strobe)
Output with read data, input with write data. Edge aligned with read
data, centered with write data. The data strobes DQS are paired
with differential signals /DQS, respectively, to provide differential
pair signaling to the system during both reads and writes. DDR3
SDRAM supports differential data strobe only and does not support
single-ended.
D3,D10,P10,P3
D4,D9,P9,P4
DQS0~3,
/DQS0~3
(Command Inputs)
RAS CAS
,
G4,G3,J4
RAS CAS & WE (along with CS) define the command being
,
entered.
, WE
(Input Data Mask)
DM is input mask signal for write data. Input data is masked when
DM are sampled HIGH coincident with that input data during a write
access. DM is sampled on both edges of DQS.
C4,C9,R9,R4
DM0 ~MD3
B2,A4,C2,B4,E2,E4,F
2,F4,B11,A9,C11,B9,
E11,E9,F11,F9,M11,
M9,N11,N9,R11,T9,T
11,U9,M2,M4,N2,N4,
R2,T4,T2,U4
(Data Input/Output)
Data inputs and outputs are on the same pin.
DQ0~31
A1,G1,L1,U1,A12,
G12,L12,U12,/F1,M1,
A2,J2,U2,A11,J11,
U11,F12,M12
(Power Supply/Ground)
VDD and VSS are power supply for internal circuits.
VDD/VSS
B1,C1,R1,T1,D2,P2,
E3,F3,M3,N3,E10,F1
0,M10,N10,D11,P11,
B12,C12,R12,T12/D1
,E1,N1,P1,A3,B3,C3,
R3,T3,U3,
(DQ Power Supply/DQ Ground)
VDDQ and VSSQ are power supply for the output buffers.
VDDQ/
VSSQ
A10,B10,C10,R10,T1
0,U10,D12,E12,N12,
P12
(ZQ Calibration)
J3,J10,G2,H12
ZQ0 ~ZQ3
RESET
Reference pin for ZQ calibration
(Active Low Asynchronous Reset)
Reset is active when RESET is LOW, and inactive when RESET
is HIGH. RESET must be HIGH during normal operation.
H1
RESET is a CMOS rail to rail signal with DC high and low at 80%
and 20% of VDD, i.e. 1.20V for DC high and 0.30V for DC low.
(Reference Voltage)
Reference voltage for DQ
(Reference Voltage)
J1
VREFDQ
VREFCA
J12
Reference voltage for CA
Note: Input pins only BA0-BA2, A0-A13,RAS
termination.
,
CAS
,
WE , CS, CKE, ODT and RESET do not supply
Jul. 2012
5/41
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