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EM47FM3288SBB 参数 Datasheet PDF下载

EM47FM3288SBB图片预览
型号: EM47FM3288SBB
PDF下载: 下载PDF文件 查看货源
内容描述: 16GB ( 64mA的?? 8Bankà ?? 32 ),双数据速率3 SDRAM堆叠 [16Gb (64M×8Bank×32) Double DATA RATE 3 Stack SDRAM]
分类和应用: 动态存储器
文件页数/大小: 41 页 / 1147 K
品牌: EOREX [ EOREX CORPORATION ]
 浏览型号EM47FM3288SBB的Datasheet PDF文件第33页浏览型号EM47FM3288SBB的Datasheet PDF文件第34页浏览型号EM47FM3288SBB的Datasheet PDF文件第35页浏览型号EM47FM3288SBB的Datasheet PDF文件第36页浏览型号EM47FM3288SBB的Datasheet PDF文件第37页浏览型号EM47FM3288SBB的Datasheet PDF文件第39页浏览型号EM47FM3288SBB的Datasheet PDF文件第40页浏览型号EM47FM3288SBB的Datasheet PDF文件第41页  
EM47FM3288SBB  
Mode Register MR2  
The Mode Register MR2 stores the data for controlling refresh related features, including RTT_WR impedance  
and CAS write latency (CWL). The Mode Register 2 is written by asserting low on /CS, /RAS, /CAS, /WE, high  
on BA1, low on BA0 and BA2, while controlling the states of address pins according to the table below.  
BA2 BA1 BA0 A13 A12 A11 A10  
A9  
A8  
0
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
0
1
0
0
0
0
Rtt_WR  
SRT  
ASR  
CWL  
PASR  
Partial Array Self Refresh  
Full Array  
A2  
A1  
0
A0  
0
Self refresh temp. range  
A7  
0
0
0
0
0
1
1
1
1
Normal operating temp. range  
Extended temp. self refresh  
Half (BA[2:0]=000,001,010 & 011)  
Quarter (BA[2:0]=000 & 001)  
1/8th (BA[2:0]=000)  
0
1
1
1
0
1
1
Auto Self Refresh  
A6  
3/4th (BA[2:0]= 010,011,100,101,110 & 111)  
Half (BA[2:0]=100,101,110 & 111)  
Quarter (BA[2:0]=110 & 111)  
0
0
Manual SR reference  
ASR Enabled  
0
1
0
1
1
0
1/8th (BA[2:0]=111)  
1
1
MRS Mode  
MR0  
BA1  
0
BA0  
0
Rtt_WR  
Dynamic ODT off  
RZQ/4  
A10  
0
A9  
0
CAS write latency (CWL)  
A6  
0
A4  
0
A3  
MR1  
0
1
0
1
5 (tCK (avg) 2.5ns)  
0
1
0
1
0
1
0
1
MR2  
1
0
RZQ/2  
1
0
6 (2.5ns  
7 (1.875ns  
8 (1.5ns  
t
CK (avg) 1.875ns)  
CK (avg) 1.5ns)  
CK (avg) 1.25ns)  
0
0
MR3  
1
1
Reserved  
1
1
t
0
1
t
0
1
Reserved  
Reserved  
Reserved  
Reserved  
1
0
1
0
1
1
1
1
Note1. BA2, A8, A11 ~ A13 are RFU and must be programmed to 0 during MRS.  
Note2. The Rtt_WR value can be applied during writes even when Rtt_Nom is disabled. During write leveling,  
Dynamic ODT is not available.  
CAS Write Latency (CWL)  
The CAS Write Latency is defined by MR2 (bits A3-A5). CAS Write Latency is the delay, in clock cycles,  
between the internal Write command and the availability of the first bit of input data. DDR3 SDRAM does not  
support any half-clock latencies. The overall Write Latency (WL) is defined as Additive Latency (AL) + CAS  
Write Latency (CWL); WL = AL + CWL.  
Dynamic ODT (Rtt_WR)  
DDR3 SDRAM introduces a new feature “Dynamic ODT”. In certain application cases and to further enhance  
signal integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be  
changed without issuing an MRS command. MR2 Register locations A9 and A10 configure the Dynamic ODT  
settings. In Write leveling mode, only RTT_Nom is available.  
Jul. 2012  
38/41  
www.eorex.com  
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