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EM42BM3284LBA_09 参数 Datasheet PDF下载

EM42BM3284LBA_09图片预览
型号: EM42BM3284LBA_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 8M × 4Bank × 32 ),双倍数据速率SDRAM [1Gb (8M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 1075 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM42BM3284LBA  
Output Drive Strength  
The normal drive strength got all outputs is specified to be LV-CMOS. By setting EMRS specific parameter  
on A6 and A5, driving capability of data output drivers is selected.  
Temperature Compensated Self-Refresh  
TCSR controlled by programming in the extended mode register (EMRS). The memory automatically  
changes the self-refresh cycle by temperature fluctuations.  
Partial Array Self Refresh  
In EMRS setting ,memory array size to be refreshed during self-refresh operation is programmable in order  
to reduce power. Data outside the defined area will not be retained during self-refresh.  
Feb. 2009  
www.eorex.com  
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