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EM42BM3284LBA_09 参数 Datasheet PDF下载

EM42BM3284LBA_09图片预览
型号: EM42BM3284LBA_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 8M × 4Bank × 32 ),双倍数据速率SDRAM [1Gb (8M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 1075 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM42BM3284LBA  
Mode Register Definition  
Mode Register Set  
The mode register stores the data for controlling the various operating modes of DDR SDRAM which  
contains addressing mode, burst length, /CAS latency, test mode, DLL reset and various vendors specific  
opinions. The defaults values of the register is not defined, so the mode register must be written after EMRS  
setting for proper DDR SDRAM operation. The mode register is written by asserting low on /CS, /RAS, /CAS,  
/WE and BA0 ( The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into  
the mode register. ) The state of the address pins A0-A12 in the same cycle as /CS, /RAS, /CAS, /WE and  
BA0 going low is written in the mode register. Two clock cycles are requested to complete the write operation  
in the mode register. The mode register contents can be changed using the same command and clock cycle  
requirements during operating as long as all banks are in the idle state. The mode register is divided into  
various fields depending on functionality. The burst length uses A0-A2, addressing mode uses A3, /CAS  
latency ( read latency from column address ) uses A4-A6. A7 is used for test mode. A8 is used for DDR reset.  
A7 must be set to low for normal MRS operation.  
Feb. 2009  
www.eorex.com  
18/24  
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