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EM42BM3284LBA_09 参数 Datasheet PDF下载

EM42BM3284LBA_09图片预览
型号: EM42BM3284LBA_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 8M × 4Bank × 32 ),双倍数据速率SDRAM [1Gb (8M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 1075 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM42BM3284LBA  
Extended Mode Register Set ( EMRS )  
The Extended mode register is written by asserting low on /CS, /RAS, /CAS, /WE and high on BA1 ( The  
DDR SDRAM should be in all bank precharge with CKE already prior to writing into the extended mode  
register. ) The state of address pins A0-A10 and BA1 in the same cycle as /CS, /RAS, /CAS, and /WE going  
low is written in the extended mode register. The mode register contents can be changed using the same  
command and clock cycle requirements during operation as long as all banks are in the idle state. A0 is used  
for DLL enable or disable. High on BA0 is used for EMRS. All the other address pins except A0 and BA0  
must be set to low for proper EMRS operation.  
Feb. 2009  
www.eorex.com  
21/24  
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