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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
Automatic Sleep Mode  
The automatic sleep mode minimizes Flash device energy consumption. The device automatically  
enables this mode when addresses remain stable for tacc + 30ns. The automatic sleep mode is  
independent of the CE#, WE# and OE# control signals. Standard address access timings provide  
new data when addresses are changed. While in sleep mode, output is latched and always  
available to the system. ICC4 in the DC Characteristics table represents the automatic sleep more  
current specification.  
Hardware Data Protection  
The command sequence requirement of unlock cycles for programming or erasing provides data  
protection against inadvertent writes as seen in the Command Definitions table. Additionally, the  
following hardware data protection measures prevent accidental erasure or programming, which  
might otherwise be caused by false system level signals during Vcc power up and power down  
transitions, or from system noise.  
Low VCC Write Inhibit  
When Vcc is less than VLKO, the device does not accept any write cycles. This protects data during  
Vcc power up and power down. The command register and all internal program/erase circuits are  
disabled, and the device resets. Subsequent writes are ignored until Vcc is greater than VLKO. The  
system must provide the proper signals to the control pins to prevent unintentional writes when Vcc  
is greater than VLKO  
.
Write Pulse “Glitch” protection  
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.  
Logical Inhibit  
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH, or WE# = VIH. To initiate a  
write cycle, CE# and WE# must be a logical zero while OE# is a logical one. If CE#, WE#, and OE#  
are all logical zero (not recommended usage), it will be considered a read.  
Power-up Write Inhibit  
During power-up, the device automatically resets to READ mode and locks out write cycles. Even  
with CE# = VIL, WE# = VIL and OE# = VIH, the device will not accept commands on the rising edge of  
WE#.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
10  
Rev. A, Issue Date: 2005/01/07