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EN29LV400AB-70TI 参数 Datasheet PDF下载

EN29LV400AB-70TI图片预览
型号: EN29LV400AB-70TI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8位/ 256K ×16位)闪存引导扇区快闪记忆体, CMOS 3.0伏只 [4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 41 页 / 378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29LV400A  
When the Erase Suspend command is written during a sector erase operation, the device requires a  
maximum of 20 µs to suspend the erase operation.  
After the erase operation has been suspended, the system can read array data from or program  
data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for  
erasure.) Normal read and write timings and command definitions apply. Reading at any address  
within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or  
DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See  
“Write Operation Status” for information on these status bits.  
After an erase-suspended program operation is complete, the system can once again read array  
data within non-suspended sectors. The system can determine the status of the program operation  
using the DQ7 or DQ6 status bits, just as in the standard program operation. See “Write Operation  
Status” for more information. The Autoselect command is not supported during Erase Suspend  
Mode.  
The system must write the Erase Resume command (address bits are don’t-care) to exit the erase  
suspend mode and continue the sector erase operation. Further writes of the Resume command are  
ignored. Another Erase Suspend command can be written after the device has resumed erasing.  
WRITE OPERATION STATUS  
DQ7: DATA# Polling  
The EN29LV400A provides DATA# polling on DQ7 to indicate the status of the embedded  
operations. The DATA# polling feature is active during the embedded Programming, Sector Erase,  
Chip Erase, and Erase Suspend. (See Table 6)  
When the embedded Programming is in progress, an attempt to read the device will produce the  
complement of the data written to DQ7. Upon the completion of the embedded Programming, an  
attempt to read the device will produce the true data written to DQ7. For the embedded  
Programming, DATA# polling is valid after the rising edge of the fourth WE# or CE# pulse in the  
four-cycle sequence.  
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the  
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7  
output during the read cycles. For Chip Erase, the DATA# polling is valid after the rising edge of the  
sixth WE# or CE# pulse in the six-cycle sequence. DATA# polling is valid after the last rising edge of  
WE# or CE# pulse for chip erase or sector erase.  
DATA# Polling must be performed at any address within a sector that is being programmed or  
erased and not a protected sector. Otherwise, DATA# polling may give an inaccurate result if the  
address used is in a protected sector.  
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when  
the output enable (OE#) is low. This means that the device is driving status information on DQ7 at  
one instant of time and valid data at the next instant of time. Depending on when the system  
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the  
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.  
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.  
The flowchart for DATA# polling (DQ7) is shown on Flowchart 5. The DATA# polling (DQ7) timing  
diagram is shown in Figure 8.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2005 Eon Silicon Solution, Inc., www.essi.com.tw  
14  
Rev. A, Issue Date: 2005/01/07  
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