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EN25S10 参数 Datasheet PDF下载

EN25S10图片预览
型号: EN25S10
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位1.8V串行闪存与4K字节扇区制服 [1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 530 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25S10  
Figure 18. Read Manufacturer / Device ID Diagram  
Read Identification (RDID) (9Fh)  
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read,  
followed by two bytes of device identification. The device identification indicates the memory type in the  
first byte , and the memory capacity of the device in the second byte .  
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not  
decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) instruction  
should not be issued while the device is in Deep Power down mode.  
The device is first selected by driving Chip Select Low. Then, the 8-bit instruction code for the  
instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being  
shifted out on Serial Data Output , each bit being shifted out during the falling edge of Serial Clock .  
The instruction sequence is shown in Figure 19. The Read Identification (RDID) instruction is  
terminated by driving Chip Select High at any time during data output.  
When Chip Select is driven High, the device is put in the Standby Power mode. Once in the Standby  
Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
22  
Rev. F, Issue Date: 2011/11/07  
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