欢迎访问ic37.com |
会员登录 免费注册
发布采购

EN25S10 参数 Datasheet PDF下载

EN25S10图片预览
型号: EN25S10
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位1.8V串行闪存与4K字节扇区制服 [1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 530 K
品牌: EON [ EON SILICON SOLUTION INC. ]
 浏览型号EN25S10的Datasheet PDF文件第20页浏览型号EN25S10的Datasheet PDF文件第21页浏览型号EN25S10的Datasheet PDF文件第22页浏览型号EN25S10的Datasheet PDF文件第23页浏览型号EN25S10的Datasheet PDF文件第25页浏览型号EN25S10的Datasheet PDF文件第26页浏览型号EN25S10的Datasheet PDF文件第27页浏览型号EN25S10的Datasheet PDF文件第28页  
EN25S10  
Figure 20. Enter OTP Mode  
Power-up Timing  
Figure 21. Power-up Timing  
Table 8. Power-Up Timing and Write Inhibit Threshold  
Symbol  
Parameter  
Min.  
10  
Max.  
Unit  
µs  
(1)  
t
VCC(min) to CS# low  
VSL  
(1)  
t
Time delay to Write instruction  
1
10  
ms  
PUW  
Note:  
10 The parameters are characterized only.  
INITIAL DELIVERY STATE  
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh).  
The Status Register contains 00h (all Status Register bits are 0).  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
24  
Rev. F, Issue Date: 2011/11/07  
 复制成功!