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EN25S10 参数 Datasheet PDF下载

EN25S10图片预览
型号: EN25S10
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位1.8V串行闪存与4K字节扇区制服 [1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 530 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25S10  
Figure 13. Block Erase Instruction Sequence Diagram  
Chip Erase (CE) (C7h/60h)  
The Chip Erase (CE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable  
(WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction  
has been decoded, the device sets the Write Enable Latch (WEL).  
The Chip Erase (CE) instruction is entered by driving Chip Select (CS#) Low, followed by the instruction  
code on Serial Data Input (DI). Chip Select (CS#) must be driven Low for the entire duration of the  
sequence.  
The instruction sequence is shown in Figure 14. Chip Select (CS#) must be driven High after the eighth  
bit of the instruction code has been latched in, otherwise the Chip Erase instruction is not executed. As  
soon as Chip Select (CS#) is driven High, the self-timed Chip Erase cycle (whose duration is t ) is  
CE  
initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value  
of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Chip Erase  
cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write  
Enable Latch (WEL) bit is reset.  
The Chip Erase (CE) instruction is executed only if all Block Protect (BP2, BP1, BP0) bits are 0. The  
Chip Erase (CE) instruction is ignored if one, or more blocks are protected.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
18  
Rev. F, Issue Date: 2011/11/07  
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