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EN25S10 参数 Datasheet PDF下载

EN25S10图片预览
型号: EN25S10
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位1.8V串行闪存与4K字节扇区制服 [1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector]
分类和应用: 闪存
文件页数/大小: 34 页 / 530 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25S10  
Figure 16. Release Power-down Instruction Sequence Diagram  
Figure 17. Release Power-down / Device ID Instruction Sequence Diagram  
Read Manufacturer / Device ID (90h)  
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down /  
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device  
ID.  
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device  
ID instruction. The instruction is initiated by driving the CS# pin low and shifting the instruction code  
“90h” followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Eon (1Ch)  
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as  
shown in Figure 18. The Device ID values for the EN25S10 are listed in Table 5. If the 24-bit address is  
initially set to 000001h the Device ID will be read first  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc.,  
www.eonssi.com  
21  
Rev. F, Issue Date: 2011/11/07  
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